A new power device structure is proposed, conceived to operate in a high temperature, harsh environment, for example within a motor drive application down hole, as an inverter in the engine bay of an electric car, or as a solar inverter in space. The lateral silicon power device resembles a laterally diffused MOSFET (LDMOS), such as those implemented within silicon on insulator (SOI) substrates. However, unlike SOI, the Si thin film has been transferred directly onto a semi-insulating 6H silicon carbide (6H-SiC) substrate via a wafer bonding process. Thermal simulations of the hybrid Si/SiC substrate have shown that the high thermal conductivity of the SiC will have a junction-to-case temperature approximately 4 times less that an equivalent SOI device, reducing the effects of self-heating. Electrical simulations of a 600 V power device, implemented entirely with the silicon thin film, suggest that it will retain the ability of SOI to minimise leakage at high temperature, but does so with 50% less conduction losses.
Simulation of a new hybrid Si/SiC power device for harsh environment applications
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P.M. Gammon, C.W. Chan, P.A. Mawby; Simulation of a new hybrid Si/SiC power device for harsh environment applications. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 1 July 2015; 2015 (HiTEN): 000190–000194. doi: https://doi.org/10.4071/HiTEN-Session5-Paper5_5
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