In order to reach previously untapped wells, the oil and gas industry continues to drill deeper, resulting in extreme operating temperatures for electronic systems. It is essential for electronic circuits and systems to be able to withstand extreme temperatures. The proposed power amplifier (PA) intends for a downhole communication system operating at an ambient temperature of 230 °C. The proposed PA is designed with Qorvo T2G6003028-FL GaN on SiC HEMT, which offers a high junction temperature. The proposed PA can operate reliably up to an ambient temperature of 230 °C with the operation frequency from 228 MHz to 263 MHz. At 230 °C, it achieves maximum output power of 1.66 W, the peak gain of 24 dB, peak PAE (power added efficiency) of 25%, OP1dB (output 1-db compression point) of 32 dBm, and OIP3 (output third intercept point) of 37.9 dBm..

Downhole communication, high temperature, power amplifier, GaN PA, extreme environment electronics
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