In order to form a compartmental EMI shielding structure for radio frequency (RF) modules, we have proposed the new process named ”imprint-Through Mold Via (i-TMV)”, which could be fabricated by imprinting with a silicon master and filling with conductive paste. In this work, a test coupon was fabricated and EMI shielding effect of the i-TMV was actually evaluated by measurement of the electric field strength that leaked through from via array. As a result, it was found that the shielding effect was 23.6 dB at 4 GHz, which was close to the completely shielded value with a metal cap (25.6 dB). This result indicated that the i-TMV was significantly effective as a compartmental EMI shielding for the Sub-6 band application.

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