Advanced process technology is required to develop and enable mass production of high-density 3D and 2.5D interconnect technologies.

In this paper, Canon and IBM @ Albany NanoTech will present process optimization results for lithography applications requiring precise thick-resist profile control and precise overlay accuracy of distorted patterns on bonded process wafers. Canon will also provide additional product updates from Canon Anelva.

Lithography, stepper, IR Alignment, bonded wafer, distortion
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© 2014 International Microelectronics Assembly and Packaging Society
2014