This paper describes a three-step approach to characterize a low-pressure chemical vapor deposition (LPCVD) flat polysilicon process. The first step was to design and construct a flat polysilicon deposition furnace for reduced defectivity and improved film uniformity. The second phase was to characterize a process in this newly constructed furnace for both film uniformity and particles by using an L18 Taguchi experimental design. The third phase was to verify the recommended setting from the experimental design by processing confirmation runs. Results from the confirmation runs in the optimally constructed polysilicon furnace showed that particles can be reduced by up to 66 percent, and film uniformity can be improved by 29 percent over the current production process.

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