The purpose of this experiment was to assess the importance of electrostatic attraction in contamination control in a semiconductor fab. Wafer handling was studied in a cryogenic cleaning tool in a working 300-millimeter (mm) fab in the United States. The particles per wafer pass (PWP, >200 nanometers [nm]) was reduced from 0.455±0.058 to 0.245±0.046 through the use of air ionization. While the tool is one of the cleanest in the fab, the tool still exhibited a large percentage improvement in contamination level by the addition of air ionization.
Measuring the PWP Improvement in the Handling Component of a Semiconductor Process Tool from Air Ionization
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Lawrence Levit; Measuring the PWP Improvement in the Handling Component of a Semiconductor Process Tool from Air Ionization. Journal of the IEST 1 April 2008; 51 (1): 114–121. doi: https://doi.org/10.17764/jiet.51.1.9352066v41411312
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