In the last few years, several low-temperature coefficient of expansion of low temperature cofired ceramic (LTCC) materials have been developed for direct wafer bonding to silicon. BGK, a sodium-containing LTCC, was originally developed for anodic bonding of the sintered LTCC, whereas BCT (bondable ceramic tape) was tailored for direct silicon bonding of green LTCC tapes to fabricate a quasi-monolithic, silicon ceramic compound substrate. This so-called silicon-on-ceramic (SiCer) technique is based on homogeneous nanostructuring of a silicon substrate, a lamination step of BCT and Si, and a subsequent pressure-assisted sintering. We present a new approach for an integrated radio frequency (RF)-platform setup combining passive, active, and mechanical elements on one SiCer substrate. In this context, RF parameters of the Si-adapted LTCC tapes and the use of commercial metal pastes on BCT with respect to bondability and solderability are investigated. We show first technological results of creating cavities at the SiCer interface for SiCer-specific contacting options (e.g., exposed contact pads at the interface), as well as windows in the ceramic layer of the SiCer substrate for additional Si processing (e.g., Si backside thin-film wiring, plasma etching). A further investigated platform technology is deep reactive-ion etching of the SiCer composite substrate. The etching behavior of Si and BCT is demonstrated and discussed. With the SiCer technique, it is possible to reduce the Si content at the setup of RF microelectromechanical system to a minimum (low signal damping).

This content is only available as a PDF.
You do not currently have access to this content.